Abstract
AbstractTransmission Electron Microscopy, high resolution X‐ray diffraction and reciprocal space maps, Rutherford Back Scattering and photoluminescence were applied to study InGaN layers grown by MOCVD with increasing layer thickness (100 nm to 1000 nm) and nominally constant In concentration of 10%. Spontaneous stratification of the layer has been found. A strained layer with lower than nominal In content was found in direct contact with the underlying GaN followed by relaxed layers with a nominal or higher In concentration. A high density of randomly distributed stacking faults as well as domains with cubic structure and closely distributed stacking faults (polytype‐like) were present in the thicker layers. Strong corrugation of the thicker sample surface was observed. The appearance of multiple photoluminescence line positions was related not only to the spontaneously formed layers with different In content, but also to the structural planar defects formed in the thicker layers. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
