Abstract
Valleytronics has attracted much attention due to its potential applications in information progress and data storage. In this paper, monolayer Cr2S3 is proven to be a ferromagnetic (FM) semiconductor by using first-principles calculations. Moreover, monolayer Cr2S3 exhibits a perpendicular magnetic anisotropy energy of 30 μeV/f.u. Surprisingly, monolayer Cr2S3 presents spontaneous valley polarization, which means that it will be nonvolatile for data storage. Notably, monolayer Cr2S3 changes to an antiferromagnetic (AFM) state from the original FM state under biaxial tensile strain, and its easy axis will be reorientated from out-of-plane to in-plane when the compressive strain is larger than −2%. Importantly, for AFM monolayer Cr2S3, the valley polarization reversion can be realized by an external electric field along the z direction. In brief, valley polarization has been achieved in both FM and AFM monolayer Cr2S3, which is very rare in other valleytronics research. The present research provides a tantalizing candidate for realizing and manipulating valley and spin physics.
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