Spontaneous Polarization Screening Effect and Trap‐State Density at Grain Boundaries of Semiconducting Barium Titanate Ceramics

Abstract

The grain‐boundary trap‐state density and the polarization screening effect were studied for a series of semiconducting PTCR barium titanate ceramic samples with different manganese (Mn) additives and different thermal treatments. The grain‐boundary resistance and capacitance data were measured by the ac complex impedance method. The grain‐boundary data obtained were analyzed using a simple double‐depletion‐layer model and an absolute‐zero‐temperature approach for the Fermi distribution function for the boundary trap states. The energy density distributions of the boundary trap states were found to be V‐shaped for the energy range studied, from 0.35 to 1.35 eV, as measured from the conduction band downward. The “neutral” Fermi level at the grain boundary is taken as 1.35 eV and the bulk Fermi level is taken as 0.15 eV from the conduction band. For the samples without the Mn additive, the PTCR effect is controlled by the trap densities located near 0.35 eV. The trap centers are believed to be barium and oxygen vacancies, or chemisorped oxygens. For the samples with Mn additives, the trap densities increase dramatically near 1.35 eV and play a dominant role in the PTCR effect. These trap centers are believed to be Mn4+ ions at the titanium sites. The charge‐compensation effect of spontaneous polarizations on the trap charges was found to be linearly proportional to the total amount of trap charges at that temperature.