Abstract

Within the framework of the effective mass method a formula for the computation of the probability of the following non-radiative transition in a semiconductor- or insulator crystal was deduced: two holes and one electron or two electrons and one hole are trapped on a crystal lattice defect, one electron recombines with one hole and the energy released thereby is taken up by the remaining quasiparticle which is thus set free and a free carier is formed. The deduced formula is applied to a Cu2O-crystal with a copper-ion vacancy as the crystal lattice defect.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call