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Abstract
Magnetotransport and magnetism of epitaxial SmTiO3/EuTiO3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ∼3.9 × 1014 cm−2 carriers into the EuTiO3. The itinerant carriers exhibit two distinct contributions to the spontaneous Hall effect. The anomalous Hall effect appears despite a very small magnetization, indicating a non-collinear spin structure, and the second contribution resembles a topological Hall effect. Qualitative differences exist in the temperature dependence of both Hall effects when compared to uniformly doped EuTiO3. In particular, the topological Hall effect contribution appears at higher temperatures and the anomalous Hall effect shows a sign change with temperature. The results suggest that interfaces can be used to tune topological phenomena in itinerant magnetic systems.
Highlights
(Quasi-)two-dimensional electron systems at polar oxide interfaces have generated significant interest
Its anomalous Hall effect (AHE) changes sign with carrier density,[6] which is an indication of regions in the Brillouin zone that carry a large Berry curvature near the Fermi level, such as band crossings.[7,8,9]
An additional contribution appears in the Hall signal of doped EuTiO3 films, which closely resembles the topological Hall effect (THE).[13]
Summary
(Quasi-)two-dimensional electron systems at polar oxide interfaces have generated significant interest. Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface
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