Abstract

Moir{\'e} superlattice realized in two-dimensional heterostructures offers an exciting platform to access strongly-correlated electronic states. In this work, we study transition metal dichalcogenides (TMD) Moir{\'e} superlattices with time-reversal-symmetry and nontrivial spin{/valley}-Chern numbers. Utilizing realistic material parameters and the method of exact diagonalization, we find that at a certain twisting angle and fractional filling, gapped fractional topological states, i.e., fractional Chern insulators, are naturally {stabilized} by simply introducing the Coulomb repulsion. In contrast to fractional quantum Hall systems, where the time-reversal symmetry has to be broken explicitly, these fractional states break the time-reversal symmetry spontaneously. {We show that the Chern number contrasting in the opposite valleys imposes a strong constraint on the nature of fractional Chern insulator and the associated low energy excitations.} We also propose to realize the non-abelian Moore-Read state in TMD Moir{\'e} superlattice sandwiched between nonlinear dielectric media.

Highlights

  • When two layers of two-dimensional materials are placed on top of each other with slight misalignment it creates a superlattice with periodicity much larger than the atomic lattice parameter

  • We study transition metal dichalcogenides (TMD) Moiré superlattices with time-reversal symmetry and nontrivial spin/valley-Chern numbers

  • We show that the Chern number contrasting in the opposite valleys imposes a strong constraint on the nature of fractional Chern insulator and the associated low-energy excitations

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Summary

Introduction

When two layers of two-dimensional materials are placed on top of each other with slight misalignment it creates a superlattice with periodicity much larger than the atomic lattice parameter. We study transition metal dichalcogenides (TMD) Moiré superlattices with time-reversal symmetry and nontrivial spin/valley-Chern numbers. Gapped electronic states at fractional filling may have two origins: (i) charge order that spontaneously breaks the translational symmetry and (ii) fractional topological order, e.g., fractional Chern insulators (FCI) [44,45,46,47,48,49,50,51].

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