Abstract
We prepared TlInGaAsN/TlInP triple quantum well structures using gas source molecular beam epitaxy and characterized their structures by means of transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM). Cross-sectional TEM and STEM observations and electron diffraction experiments revealed that naturally-formed vertical quantum wells, so-called lateral composition modulation, are formed in TlInGaAsN layers. Their modulation period was estimated to ~1 nm which is much smaller than that reported previously.
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