Abstract

Spontaneous explosive crystallization in a nanosized Se/In heterostructure is experimentally studied. It is demonstrated that spontaneous explosive crystallization in this structure occurs in a wide (70–280 nm) Se thickness range in the narrow time interval of 1.7–3.5 s. It is established that, depending on the Se and In thickness ratio, in reaction product spontaneous explosive crystallization results in the formation of hexagonal InSe with the crystal lattice parameters a = 4.05 A and c = 16.93 A and hexagonal Se with a = 4.3662 A and c = 4.9536 A.

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