Abstract
True spontaneous emission (TSE) measurements on InAs/InGaAs/GaAs quantum dot(QD) lasers have been performed as a function of injection current and cavity length. Foreach laser, TSE from both the ground state (GS) transition and the excited state (ES)transition has been analyzed. It is found that Auger processes are the major nonradiativerecombination (NR) processes for both the GS and ES transitions. In particular, for thefirst time, the existence of Auger like NR features in ES transitions has beenexperimentally demonstrated. In addition, obvious competition for carriers between the EStransition and the GS transition has been observed in TSE analysis. Furthermore, the QDlaser’s cavity length has a strong effect on the NR process in GS transitions, due to GSgain saturation. Therefore, when analyzing the NR processes in operating QDlasers, gain saturation due to cavity length limits should be properly considered.
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