Abstract
The spontaneous emission interference of a V-type three-level atom located in a topological insulator (TI) multilayer structure is investigated. Based on the reflection coefficients of the TI multilayer derived by the transfer matrix method, the atomic spontaneous emission rate is expressed in terms of the dyadic Green’s function. Due to the accumulation of polarization conversion at each interface in the multilayer structure, the anisotropy of the electromagnetic environment around the atom can be improved and thereby the spontaneous emission is effectively suppressed and quantum interference enhanced. The quantum interference enhancement effect tends to a saturation value with the increasing layer number. The quantum interference of the atom inside the TI multilayer cavity can be stronger than that in front of a TI multilayer within a large range of cavity length for the case of parallel magnetization on TI surfaces.
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