Abstract
AbstractThe radiation properties of a GaN/AlGaN‐based terahertz‐quantum cascade laser (THz‐QCL) device fabricated on a high quality GaN substrate were investigated in this work. The radiant intensity from a THz‐QCL fabricated on a GaN substrate showed a value (∼20 pW) about 10 times higher than that from a THz‐QCL grown on a metal organic chemical vapor deposition (MOCVD)‐GaN template that we had used before. Furthermore, we observed for the first time spontaneous THz emission with a peak at 1.37 THz in the case of a THz‐QCL grown on a GaN substrate. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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