Abstract
A method of the analysis of spontaneous emission factor have been showed for a planar micro-cavity laser with distributed mirrors based on spectra and half angle at far field full-width half maximum of the lasing mode. After the spontaneous emission radiation patters for a dipole in the micro-cavity is calculated, a considerable value of spontaneous emission factor 0.1 is presented. Then the band filling in the semiconductor and the vacuum field in the micro-cavity are studied together, the spontaneous emission spectrum for a quantum well micro-cavity is described. The maximum scaling of spontaneous emission factor in the practical micro-cavity laser is 3.2*10-3 in the quantum well micro-cavity. The difference spontaneous emission between a dipole micro-cavity with a quantum well micro-cavity is discussed.
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