Abstract
Spontaneous emission control has been achieved in InxGa1-xAs/GaAs planar microcavities with DBR reflectors. The room temperature emission in λ-sized cavities is enhanced compared to its free space value whilst in λ/2-sized cavities suppression of spontaneous emission is observed. The characteristics of spontaneous emission in microcavities depend on the wavelength difference between the emitter and the cavity resonance. It has been shown that ideal tuning of the cavity can be achieved by adjusting the sample temperature. In general, the observed trends are in agreement with theoretical predictions. These changes in the spontaneous emission process directly effect VCSEL properties. An increased coupling efficiency of spontaneous emission into the lasing mode is observed in VCSELs with λ-sized cavities.
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