SPM local oxidation nanolithography with active control of cantilever dynamics

Abstract

Local oxidation nanolithography using scanning probe microscope (SPM) has enabled us to fabricate nanometer-scale oxide wires on material surfaces. Here, we study tapping mode SPM local oxidation experiments for silicon by controlling the dynamic properties of the cantilever. Dependence of feature size of fabricated oxide wires on the amplitude of the cantilever was precisely investigated. The quality factor (Q) was fixed at a natural value of ∼500. By enhancing the amplitude of the cantilever, both width and height of fabricated Si oxide wires were decreased. With the variation of the amplitude of the cantilever from 0.5 V to 3.0 V (DC voltage = 22.5 V, scanning speed = 20 nm/s), the feature size of Si oxide wires was well controlled, ranging from 40 nm to 18 nm in width and 2.3 nm to 0.6 nm in height. Standard deviation of width on Si oxide wires formed by tapping mode SPM is around 2.0 nm, which is smaller than that of contact mode Si oxide wires. Furthermore, the variation of the oscillation amplitude of the cantilever does not affect the size uniformity of the wires. These results imply that the SPM local oxidation nanolithography with active control of cantilever dynamics is a useful technique for producing higher controllability on the nanometer-scale fabrication of Si oxide wires.