Abstract
In this work, we present a numerical application of a recently developed transport model for semiconductors, based on the Wigner-function approach and allowing for non-parabolic band profiles. We consider the collisionless, single-band time evolution of the Wigner function under the action of a constant external field, in presence of a band profile exhibiting a satellite valley, besides the minimum at the center of the Brillouin zone (similar to the band profile of GaAs). The transport equation is solved by the Splitting-Scheme algorithm, which is the most efficient method for solving the corresponding classical Vlasov equation.
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