Abstract
The 1.2-kV-rated 4H-SiC Split Gate MOSFET (SG-MOSFET) structure is demonstrated to have a superior high-frequency figures-of-merit (HF-FOMs) by numerical simulations, with experimental validation for the first time. Excellent electrical characteristics (specific on-resistance, threshold voltage, breakdown voltage, reverse transfer capacitance,and gate-todrain charge) were measured from devices fabricated on a 6-in SiC wafer. Compared with the conventional MOSFET, the SG-MOSFET has 2.4× smaller HF-FOM [R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> ×Q <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</sub> ] due to the reduced gate-to-drain charge.
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