Spin-Valve Effect in Fe3GeTe2/MoS2/Fe3GeTe2 van der Waals Heterostructures.

Abstract

The van der Waals (vdW) materials offer an opportunity to build all-two-dimensional (all-2D) spintronic devices with high-quality interfaces regardless of the lattice mismatch. Here, we report on an all-2D vertical spin valve that combines a typical layered semiconductor MoS2 with vdW ferromagnetic metal Fe3GeTe2 (FGT) flakes. The linear current-voltage curves illustrate that Ohmic contacts are formed in FGT/MoS2 interfaces, while the temperature dependence of the junction resistance further demonstrates that the MoS2 interlayer acts as a conducting layer instead of a tunneling layer. In addition, the magnitude of the magnetoresistance (MR) of 3.1% at 10 K is observed, which is around 8 times larger than that of the reported spin valves based on MoS2 sandwiched by conventional ferromagnetic electrodes. The MR decreasing monotonically with increasing temperature follows the Bloch's law. As the bias current decreases exponentially, the MR increases linearly up to a maximum value of 4.1%. Our results reveal the potential opportunities of vdW heterostructures for developing novel spintronic devices.