Spin–Orbit Effects in Thin Bismuth Films

Abstract

The magnetic field dependences of the resistance of thin bismuth films with a thickness of 100–700 Å were measured at different temperatures (1.5–77 K) in perpendicular and parallel magnetic fields and analyzed. The behavior of the quantum corrections to conductivity caused by the weak localization and electron–electron interaction effects is determined. In the perpendicular magnetic field, the spin–orbit interaction time τ so tends to increase with the film thickness, thereby indicating that surface scattering is dominant in the spin–orbit processes. In the parallel magnetic field, τ so increases considerably with the magnetic field. It is assumed that the strong spin–orbit electron interaction occurs due to the existence of a potential gradient near the metal surface and the parallel magnetic fields regulates the spin orientation of electrons and changes the character of spin scattering.