Abstract
By performing first-principle quantum transport calculation, the spin-dependent transport properties of zigzag-edged bilayer graphene nanoribbon based devices are investigated. There are four kinds of structures with different stacking sequences and treatment of dangling bonds considered in our work. It is shown that the devices are perfect spin-filters with extremely large spin polarization as well as substantial negative differential resistance effects, which are affected by the stacking sequences and edge structures. All these phenomena can be explained by the spin-resolved local density of states and the tranmission spectra.
Highlights
By performing first-principle quantum transport calculation, the spin-dependent transport properties of zigzag-edged bilayer graphene nanoribbon based devices are investigated
It is shown that the devices are perfect spin-filters with extremely large spin polarization as well as substantial negative differential resistance effects, which are affected by the stacking sequences and edge structures
In order to investigate the spintronic devices based on bilayer graphene, it is very important to investigate the spin-dependent transport behaviours of zigzag-edged bilayer graphene nanoribbons (ZBGNRs)
Summary
By performing first-principle quantum transport calculation, the spin-dependent transport properties of zigzag-edged bilayer graphene nanoribbon based devices are investigated. Spin-filter and negative differential resistance effect in zigzag-edged bilayer graphene nanoribbon devices
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