Abstract
The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift–diffusion equation, an expression for SDH voltage (VSDH) is derived, and drift and diffusive contributions to VSDH are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient VSDH increases in a degenerate semiconductor, consistent with the experimental observations. The expression for VSDH is reduced in three limiting cases, namely diffusive, drift–diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
