Abstract
The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift–diffusion equation, an expression for SDH voltage (VSDH) is derived, and drift and diffusive contributions to VSDH are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient VSDH increases in a degenerate semiconductor, consistent with the experimental observations. The expression for VSDH is reduced in three limiting cases, namely diffusive, drift–diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations.
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