Spin-dependent electron dynamics and recombination in GaAs1−x N x alloys at room temperature

Abstract

Conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs1−x N x alloys with a small nitrogen content (x = 2.1, 2.7, and 3.4%) is studied both experimentally and theoretically. It is found that the photoluminescence circular polarization determined by the mean spin of free electrons reaches 40–45% and this giant value persists within 2 ns. Simultaneously, the total free-electron spin decays rapidly with the characteristic time ≈ 150 ps. The results are explained by spin-dependent capture of free conduction electrons on deep paramagnetic centers resulting in the dynamical polarization of bound electrons. A nonlinear theory of spin dynamics in the coupled system of spin-polarized free and localized carriers has been developed which describes the experimental dependencies, in particular, the electron spin quantum beats observed in a transverse magnetic field.