Abstract
Magnetic properties of Ge1 − xMnx (x = 0.02, 0.04, 0.08) thin films obtained by ion-implanting Mn+ ions into single-crystal Ge plates are investigated. The contributions of the subsystem of dispersed Mn2+ ions, Ge3Mn5 ferromagnetic clusters, and Mn-enriched ferromagnetic domains of Ge to the magnetic moment of Ge1 − xMnx films are distinguished. In the subsystem of dispersed Mn2+ ions in Ge1 − xMnx films at temperatures below 10 K, a spin-wave resonance is observed in the magnetically ordered state due to percolation ferromagnetism. It is established that, in the films with percolation ferromagnetism, the exchange integrals determined from static measurements correspond to those determined by dynamic measurements.
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