Spin tunneling in multilayer spintronic devices

Abstract

We introduce a spin tunneling theory across the interfaces of multilayer spintronic devices, e.g., spin valves and magnetic random access memories, which integrates the microscopic Green's function formalism for electron propagation within the interfacial barrier with the macroscale spin-dependent Boltzmann theory, which governs the spin accumulation in the adjacent contacts. This multiscale approach makes possible the detailed studies of interfacial properties (e.g., height, shape, and spin asymmetry) required to achieve high spin injection via tunneling. Based on the calculated results, the optimal interfacial properties have been identified for possible experimental verification.