Abstract
Spin resistivity R has been shown to result mainly from the scattering of itinerant spins with magnetic impurities and lattice spins. R is proportional to the spin–spin correlation so that its behavior is very complicated near and at the magnetic phase transition of the lattice spins. For the time being there are many new experimental data on the spin resistivity going from semiconductors to superconductors. Depending on materials, various behaviors have been observed. There is however no theory so far which gives a unified mechanism for the spin resistivity in magnetic materials. Recently, we have shown Monte Carlo results for different systems. We found that the spin resistivity is very different from one material to another. In this paper, we show for the first time how the dynamic relaxation time of the lattice spins affects the resistivity of itinerant spins observed in Monte Carlo simulation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
