Abstract
We systematically investigate the spin-dependent transport properties of fully ferromagnetic (Ga,Fe)Sb/GaSb/(In,Fe)Sb and (Ga,Fe)Sb/(In,Fe)As p–n junctions grown by low-temperature molecular beam epitaxy. The (Ga,Fe)Sb/GaSb/(In,Fe)Sb p–n junctions show high Curie temperature (170–310 K) and rectifying characteristics. The polarity and magnitude of magnetoresistance of the (Ga,Fe)Sb/GaSb/(In,Fe)Sb junctions strongly depend on the GaSb spacer thickness (t). Large positive magnetoresistance (MR, 58%) and negative MR (−1.6%) were observed at 3.7 K for the samples with t = 2 and 4 nm, respectively. When the n-type (In,Fe)Sb layer was replaced by the n-type (In,Fe)As, giant MR over 500% was observed, which can be explained by spin-valve and spin-splitting effects. Our results shed light on rich spin-transport physics observed in fully ferromagnetic p–n junctions.
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