Abstract
Spin-dependent tunneling of electrons in a diluted magnetic semiconductor ZnSe∕Zn1−xMnxSe∕Zn1−yMnySe∕ZnSe∕Zn1−xMnxSe∕ZnSe heterostructure is investigated theoretically in the presence of parallel magnetic and electric fields, but our modeling is appropriate for any dilute magnetic II-VI semiconductor system. In the studied asymmetric system the transmission of electrons and the degree of spin polarization depend on the strength of the magnetic and electric fields and on the direction of the applied bias. For suitable magnetic fields, the output current of the system exhibits a nearly 100% spin polarization and the device can be used as a spin filter.
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