Abstract
The study of spin-dependent phenomena involving free carriers in magnetic semiconductor heterostructures has seen rapid advances over the past year, allowing fresh insights into spin transport, localization and carrier-mediated magnetism. These experiments have been enabled by the realization of extrinsically and intrinsically doped magnetic semiconductor heterostructures derived from the II–VI and III–V semiconductors.
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More From: Current Opinion in Solid State & Materials Science
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