Spin transfer switching and low-field precession in exchange-biased spin valve nanopillars

Abstract

Using a three-dimensional focused ion beam lithography process, we have fabricated nanopillar devices that show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent peak in the differential resistance versus current is observed similar to that reported in asymmetrical nanopillar devices. This is interpreted as evidence for the low-field excitation of spin waves, which in our case is attributed to a spin-scattering asymmetry enhanced by the IrMn exchange bias layer coupled to a relatively thin CoFe fixed layer.