Abstract
We investigate the spin-to-charge conversion emerging from a mesoscopic device connected to multiple terminals. We obtain analytical expressions to the characteristic coefficient of spin-to-charge conversion, which are applied in two kinds of ballistic chaotic quantum dots at low temperature. We perform analytical diagrammatic calculations in the universal regime for two-dimensional electron gas and single-layer graphene with the strong spin-orbit interaction in the universal regime. Furthermore, our analytical results are confirmed by numerical simulations. Finally, we connect our analytical findings to recent experimental measures giving a conceptual explanation about the apparent discrepancies between them.
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