Abstract
Spin-charge interconversion is a very active area of research in spintronics. Yet, the complex behavior of some of the most promising systems such as ${\mathrm{SrTiO}}_{3}$ (STO) interfaces is not fully understood. Here, on the basis of a 6-band $\mathbit{k}.\mathbit{p}$ method combined with spin-resolved scattering theory, we give a theoretical demonstration of transverse spin-charge interconversion physics in STO Rashba interfaces. Calculations involve injection of spin current from a ferromagnetic contact by resonant tunneling into the native Rashba-split resonant levels of the STO triangular quantum well. We compute an asymmetric tunneling electronic transmission yielding a transverse charge current flowing in plane, with a dependence with gate voltage in a very good agreement with existing experimental data.
Highlights
On the basis of a 6-band k.p method combined with spin-resolved scattering theory, we give a theoretical demonstration of transverse spin-charge interconversion physics in STO Rashba interfaces
Several papers [3,4,5,19] have reported the observation of an enormous gate-tunable inverse REE (IREE) in NiFe/LaAlO3 (LAO)/STO, NiFe/AlOx(ALOx)/STO and related systems, with a spin-charge conversion (SCC) efficiency significantly larger than that of Ag/Bi(111) [2]
We propose a modeling of SCC in the k.p framework giving rise to equivalent IREE properties in a STO electron gas (2DEG) confined in a triangular quantum well (TQW)
Summary
The interconversion between spin and charge currents mediated by Rashba interactions [1], observed in a wide range of systems (Ag/Bi interfaces [2], SrTiO3 two-dimensional electron gases (STO 2DEGs) [3,4,5,6,7,8] CoFeB/MgO [9], Fe/Ge, α-Sn [2,10]), offers huge technological opportunities from spin orbit torque and magnetic commutation to THz wave generation [11,12,13,14,15]. Several papers [3,4,5,19] have reported the observation of an enormous gate-tunable IREE in NiFe/LaAlO3 (LAO)/STO, NiFe/AlOx(ALOx)/STO and related systems, with a SCC efficiency significantly larger than that of Ag/Bi(111) [2] This makes STO 2DEGs promising candidates for the next-generation of high-speed and low-power spintronic devices such as magnetoelectric spin-orbit (MESO) transistors [20,21,22,23]. We propose a modeling of SCC in the k.p framework giving rise to equivalent IREE properties in a STO electron gas (2DEG) confined in a triangular quantum well (TQW) This model considers the specific structure of a NiFe/LAO/STO magnetic tunnel junction.
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