Spin susceptibility of two-dimensional electron system in HgTe surface quantum well

Abstract

HgTe films were grown by vapor phase epitaxy on CdZnTe substrate and passivated by anodic oxidation to form surface quantum wells, in which the two-dimensional electron systems were studied by magnetotransport experiments. In tilted magnetic fields, coincidence method was used to extract the electron spin susceptibility |mr*g*|, which is found to be very large and show no significant dependence on the filling factor ν. These results deviate from former experiments and are related to the specific band structure of our samples.