Abstract
Using magnetotunneling spectroscopy, the spin splitting of the ground state of Si donors associated with the X valley in an AlAs barrier has been observed. The magnitude of the effective gI factor in an AlAs barrier is found to be equal to 2.2 ± 0.1. It has also been found that the distribution of the probability density of electron wave functions of donor impurity states has a biaxial symmetry in the growth plane and axes corresponding to the principal crystalline directions in this plane.
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