Abstract
Abstract Recent advances in spin-polarized electron transport at the ferromagnet/semiconductor interface are summarized in the context of potential applications to spin-electronics. We review evidence for spin injection from a ferromagnetic metal into a semiconductor based on recent studies of polarized luminescence in ferromagnet/quantum well light emitting diode structures. Our recent results on spin-polarized electron transport from GaAs into Fe under optical spin pumping are shown. These observations clearly indicate an importance of the introduction of a tunneling barrier between the ferromagnetic metal and semiconductor in order to achieve a high spin injection and detection efficiency.
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