µ−spin rotation study of the temperature-dependent relaxation rate of acceptor centers in silicon

Abstract

Temperature-dependent remanent polarization of negative muons in a silicon crystal doped with phosphorus (3.2 × 1012, 2.3 × 1015, and 4.5 × 1018 cm−3) and aluminum (2 × 1014 and 2.4 × 1018 cm−3) was examined. Measurements were made over the temperature range 4–300 K in a magnetic field of 2000 G perpendicular to the muon spin. Temperature dependence of the relaxation rate was determined for the magnetic moment of a shallow Al acceptor center in a nondeformed silicon sample, and the hyperfine interaction constant was estimated for the interaction between the magnetic moments of muon and electron shell of the muonic mAl atom in silicon.