Abstract
We report on the effect of an in-plane magnetic field component on the magnetoresistance of the two-dimensional electron system (2DES) and capacitance between the 2DES and gate. The appearance of the \ensuremath{\nu}=1/3 and \ensuremath{\nu}=2/3 fractional-quantum-Hall-effect (FQHE) states has been observed to modify the effect at \ensuremath{\nu}\ensuremath{\gtrsim}2/3. Our results imply the existence of the spin-reversed quasielectron excitations in the \ensuremath{\nu}=2/3 FQHE. Charged excitations with large numbers of reversed spins (skyrmions) recently predicted for the \ensuremath{\nu}=1/3 FQHE state have not been found.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
