Spin relaxation times of exciton states in ZnCdSe/ZnSe low dimensional heterostructures

Abstract

Using the pulsed excitation with a femtosecond laser and streak-camera detection we have studied the processes of spin relaxation in the system of localized excitons in low dimensional superlattices formed by the insertion of CdSe submonolayers into the ZnSe matrices. Polarization of exciton luminescence in the magnetic field arises due to the thermal redistribution of population in the system of splitted exciton spin sublevels. The distribution of polarization across the PL band countour is governed by the complicated interplay of energy and spin relaxation processes. The study of PL decay kinetics in polarized light allows us to determine with the help of a simple two-level model the times of exciton spin relaxation. Spin relaxation times strongly decrease with the increase of magnetic field indicating the phonon assisted mechanism of spin relaxation. The detailed analysis of the dependence of spin relaxation times on the exciton localization energy is not possible with the model used due to the complicated character of exciton population kinetics for deeply localized states. Deeply localized states are to a great extent populated through the tunnelling relaxation of excitons with higher energies. The transfer of polarization in the processes of exciton energy relaxation has been clearly observed in the study of spectrally resolved decay kinetics in polarized light.