Abstract
Electron spin resonance in a system of two-dimensional electrons with a high electron mobility has been investigated and the position, width, intensity, and line shape of the resonance microwave absorption have been studied as functions of the filling factor and temperature. It has been shown that the ESR linewidth in high-electron-mobility GaAs/AlGaAs quantum wells may reach 30 MHz, which corresponds to a spin relaxation time of the two-dimensional electrons of 10 ns. The experimental data on the linewidth of the spin resonance at a filling factor of 1 are compared with the theoretical results for various spin relaxation mechanisms. It has been shown that the dominant mechanism of spin relaxation at a filling factor of 1 and a temperature of 1.5–4 K is the mutual scattering of spin excitons.
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