Year-end Sale % OFF 
Abstract
AbstractExperimental data of the temperature and concentration dependence of the ESR line‐width in highly doped n‐InSb, Ge: As, and Si: P are compared with theoretical calculations. For the spin–phonon interaction the temperature dependence and the values of the constants obtained agree within one or two orders of magnitude with theoretical results. Only qualitative agreement has been obtained for the contribution of relaxation by ionized impurity scattering. Possible sources of the line‐broadening are discussed in the limit of low temperatures, where the linewidth does not depend on temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
