Abstract
Ferromagnetic Resonance (FMR) induced electron transport change was observed for the first time. Spin inversion caused by FMR affected magnetization vector, which generated a variation in planar Hall effect. In perpendicular Hall effect measurements, no sign of change was observed even at low temperatures. The mechanism of spin pumping technique and the reason of observation are explained in terms of Anisotropic Magnetoresistance (AMR) theory. This change of electron transport property can be applied to specific frequency sensing sensor, and direct conversion filter, since the resonance occurs only when resonance condition meets.
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