Spin pumping and inverse spin Hall effect in CoFeB/IrMn heterostructures

Abstract

High spin to charge conversion efficiency is a requirement for spintronic devices, which are governed by spin pumping and the inverse spin Hall effect (ISHE). In the last decade, ISHE and spin pumping have been heavily investigated in ferromagnet/heavy metal (HM) heterostructures. Recently, antiferromagnetic (AFM) materials have been found to be a good replacement for HMs because AFMs exhibit terahertz spin dynamics, high spin–orbit coupling, and absence of the stray field. In this context, we have performed the ISHE in CoFeB/IrMn heterostructures. Spin pumping studies are carried out for Co40Fe40B20(12 nm)/Cu(3 nm)/Ir50Mn50(t nm)/AlO x (3 nm) samples where t value varies from 0 to 10 nm. Damping in all the samples is higher than in the single layer CoFeB which indicates that spin pumping due to IrMn is the underneath mechanism. Further, the spin pumping in the samples is confirmed by angle dependent ISHE measurements. We have also disentangled other spin rectifications effects and found that the spin pumping is dominant in all the samples. From the ISHE analysis the real part of spin mixing conductance () is found to be 0.704 ± 0.003 × 1018 m−2.