Abstract
We present a simple phenomenological model of the c-axis resistivity in the layered cuprates which accounts for the major features and systematics of experiments on the c-axis resistivity, ϱ c , for La 2 − x Sr x CuO 4, YBa 2Cu 3O 6 + x and Bi 2Sr 2CaCu 2O 8 . We associate the low temperature semiconductor-like upturn in the c-axis resistivity with the suppression of the planar density of states measured in the Knight shift experiments.
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