Abstract
The polarization of the tunnel conductance of spin-selective ferromagnetic insulators is modeled, providing a generalized concept of polarization including both the effects of electrode and barrier polarization. The polarization model is extended to take additional non-spin-polarizing insulating layers into account. These additional tunnel barriers are found to have a large effect on the tunneling polarization, both positively and negatively, depending on the material parameters. The model is applied to spin-filter devices containing the promising spin filter material EuO.
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