Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures

Abstract

The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent mobility, conductivity, and resistivity in (Ga,Mn)As∕GaAs, (Ga,Mn)N∕GaN, and (Si,Mn)∕Si multilayers are calculated as a function of temperature, scaled by the average magnetization of the diluted magnetic semiconductor layers. An increase of the resistivity near the transition temperature is obtained. The authors observed that the spin-polarized transport properties change strongly among the three materials.