Abstract
Spin relaxation process is simulated for nanowires and 2-D channels composed of II–VI DMS materials, particularly for Cd 1-x Mn x Te , in our work. Our studies are focused on analyzing spin relaxation behavior at T = 1 K. Variations in spin relaxation length with applied field and concentration of Mn doping are calculated and plotted. Effect of one-magnon scattering process is significant due to magnetic nature of the materials and is demonstrated in this work.
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