Abstract

Electronic surface states in Al0.1Ga0.9As|GaAs superlattice are calculated for a system with a ZnMnSe barrier in a surface cell. In the absence of applied magnetic field the ZnMnSe barrier has the same height as the Al0.1Ga0.9As barriers in the bulk cells. When a magnetic field is applied perpendicularly to the superlattice layers, the surface cell magnetic barrier height is found to vary with spin orientation. Hence, each spin polarization involves different conditions of surface state existence. Our computations show a split of Shockley states into two levels (corresponding to different spin polarizations) and appearance of Tamm states (with specific spin polarization), induced by sufficiently strong magnetic fields. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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