Abstract
We report on spin-polarized photoelectron emission and quantum yield measurements performed on AlxGa1−x As alloys (0.08⩽x⩽0.65) which were grown by molecular beam epitaxy and activated in situ to negative electron affinity by exposure to Cs and O2. We investigate the electronic structure of the alloys near the band-gap region. These alloys can be used as high- efficiency spin-polarized photoelectron sources at photon energies matching convenient light sources.
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