Abstract
Spin-polarized Goos-Hänchen (GH) displacement is calculated for electrons in a hybrid magnetic-electric-barrier (MEB) nanostructure modulated by spin-orbit couplings (SOCs), which can be realized experimentally by the deposition of a ferromagnetic (FM) stripe and a Schottky-metal (SM) stripe in parallel configuration on the top of the GaAs/AlxGa1-xAs heterostructure. Both Zeeman interaction (ZI) and SOC are taken into account. It is shown that ZI has less contribution to spin-polarized GH displacement than SOC due to a small g-factor for GaAs. It is also shown that spin-polarized GH displacement can be controlled by Rashba or Dresselhause SOC--interfacial confining electric field or strain engineering, which results hence in a tunable spatial spin splitter for spintronics device applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
