Abstract
Electronic structure of a defect center containing the gallium vacancy and substitutional oxygen atom at nitrogen site (VGaON) in zinc blende and wurtzite GaN was analyzed within GGA+U approach. The +U term was applied to d(Ga), p(N), p(O), and d(In). Neutral VGaON is in the stable high spin state with spin S = 1. The defect structure is strongly dependent on geometry of the defect and the charge state. Two spin structures, which arise due to two different configurations in VGaON, with ON either along the c-axis or in one of three equivalent tetrahedral positions in wurtzite structure were analyzed. The weak ferromagnetic coupling between centers was found. The strength of magnetic coupling is increased when there is a complex containing VGaON with additional substitutional indium atom at the second neighbor to vacancy gallium site (VGaONInGa). Magnetic coupling between VGaONInGa is ferromagnetic due to strong spin polarization of p electrons of the nearest and distant nitrogen atoms.
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