Abstract
AbstractThe paramagnetic relaxation of impurity centres in solids due to the interaction between these centres and Langmuir's oscillations of the current carrier plasma is investigated. The transition probabilities of direct and combined relaxation processes as well as of the process accompanied by the resonance fluorescence of plasmons are calculated. The dependences of the transition probabilities on transition frequency, carrier concentration, and temperature are obtained. Comparison with experimental data shows agreeement between theory and the observed pattern of the paramagnetic relaxation in semiconductors.
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