Abstract
Intersubband transitions have been studied in InAs/AlSb multi quantum wells subjected to a parallel magnetic field. In this Voigt configuration we observe two resonances whose oscillator strengths increase with magnetic field. The high energy line is interpreted as a superposition of two spin-conserving intersubband transitions while the low energy resonance corresponds to two combined spin-flip intersubband transitions. The lines are separated in energy by the depolarization shift which influences only the spin-conserving excitations. The spin-conserving transitions are induced by the parallel magnetic field although the incident light is polarized in the plane of the quantum well. The combined resonances, on the other hand, are made possible by a combination of the InAs bulk inversion asymmetry in conjunction with its narrow band gap and the high carrier density as present in our samples. In the multiple reflection path geometry the spin-flip lines can be resolved and we observe a zero-field spin-splitting of approximately Δ E=17 meV which is also a result of the bulk inversion asymmetry.
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